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| Ordering number : EN8688 CPH5846 SANYO Semiconductors DATA SHEET CPH5846 Features * MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-Channel Sillicon MOSFET (MCH3309) and a Schottky Barrier Diode (SS10015M) contained in one package facilitating high-density mounting. [MOSFET] * Low ON-resistance. * Ultrahigh-speed switching. * Low voltage drive. [SBD] * Short reverse recovery time. * Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 15 15 1 3 --55 to +125 --55 to +125 V V A A C C VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) 1unit --20 10 --1.5 --6.0 0.9 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit Marking : XY Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N0106PE SY IM TC-00000270 No.8688-1/6 CPH5846 Electrical Characteristics at Ta=25C Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF 1 VF 2 IR C trr IR=0.5mA IF=0.3A IF=0.5A VR=6V VR=10V, f=1MHz, 1 cycle IF=IR=100mA, See specified Test Circuit. 15 0.31 0.34 20 10 0.34 0.37 90 V V V A pF ns V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--20V, VGS=0V VGS=8V, VDS=0V VDS=--10V, ID=-1mA VDS=--10V, ID=-800mA ID=--800mA, VGS=-4V ID=--400mA, VGS=-2.5V ID=--70mA, VGS=--1.8V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--10V, VGS=-4V, ID=-1.5A VDS=--10V, VGS=-4V, ID=-1.5A VDS=--10V, VGS=-4V, ID=-1.5A IS=--1.5A, VGS=0V --0.4 1.3 2.3 180 240 350 290 40 25 10 35 32 27 3.2 0.8 0.6 --0.87 --1.2 235 340 600 --20 --1 10 --1.3 V A A V S m m m pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit Package Dimensions unit : mm (typ) 7017A-005 Electrical Connection 5 0.6 4 3 2.9 0.15 5 4 3 0.2 2.8 1.6 0.05 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 1 2 0.6 1 0.95 2 0.4 Top view 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 0.9 0.2 No.8688-2/6 CPH5846 Switching Time Test Circuit [MOSFET] VIN 0V --4V VIN ID= --800mA RL=12.5 VDD= --10V trr Test Circuit [SBD] Duty10% 100mA 50 10s 100 10 D PW=10s D.C.1% VOUT G --5V trr MCH5846 P.G 50 S V --2.0 --1.8 --1.6 ID -- VDS --3 --2 .0V .5V [MOSFET] --2.0 --1.8 ID -- VGS 100mA [MOSFET] VDS= --10V --4.0 V .0 V Drain Current, ID -- A --6.0 --2 --1.6 --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 --0.1 Drain Current, ID -- A --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 VGS= --1.5V --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --0.5 --1.0 --25 Ta= 75 C C 25 C --1.5 --2.0 10mA --2.5 80 100 120 140 160 IT02734 600 IT02731 Drain-to-Source Voltage, VDS -- V [MOSFET] RDS(on) -- VGS Ta=25C 500 IT02732 Gate-to-Source Voltage, VGS -- V [MOSFET] RDS(on) -- Ta Static Drain-to-Source On-State Resistance, RDS(on) -- m 500 Static Drain-to-Source On-State Resistance, RDS(on) -- m 400 400 --0.8A 300 300 ID= --0.4A 200 200 .5V = --2 , VGS A --0.4 I D= --4.0V V GS= 0.8A, I D= -- 100 100 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 0 --60 --40 --20 0 20 40 60 Gate-to-Source Voltage, VGS -- V IT02733 Ambient Temperature, Ta -- C No.8688-3/6 CPH5846 10 yfs -- ID [MOSFET] VDS= --10V Forward Transfer Admittance, yfs -- S 7 5 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 IS -- VSD [MOSFET] VGS=0V 2 1.0 7 5 3 2 = Ta --2 5C C 75 Source Current, IS -- A 3 C 25 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 0 --0.2 --0.4 Ta=7 5 C 25C --25C --0.6 --0.8 --1.0 --1.2 --1.4 Drain Current, ID -- A 100 7 IT02735 SW Time -- ID VDD= --10V VGS= --4V td(off) [MOSFET] 1000 7 5 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V IT02736 [MOSFET] f=1MHz Switching Time, SW Time -- ns 5 3 2 tf Ciss, Coss, Crss -- pF Ciss 100 7 5 3 2 tr 10 7 5 3 3 5 7 --0.1 2 3 td(on) Coss Crss 10 5 7 --1.0 2 3 5 0 --5 --10 --15 --20 Drain Current, ID -- A --4 IT02737 VGS -- Qg [MOSFET] --10 7 5 3 2 Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --1.5A Drain Current, ID -- A --3 --1.0 7 5 3 2 --0.1 7 5 3 2 --2 --1 IT02738 Drain-to-Source Voltage, VDS -- V [MOSFET] ASO IDP= --6.0A 10s 10 0 s ID= --1.5A 10 10 DC m 0m s op s er ati on (T a= 25 C ) Operation in this area is limited by RDS(on). 0 0 1 2 3 3.5 IT02739 --0.01 --0.01 Ta=25C Single pulse Mounted on a ceramic board(900mm2!0.8mm)1unit 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 23 IT11563 Total Gate Charge, Qg -- nC 1.2 PD -- Ta Drain-to-Source Voltage, VDS -- V 1m s [MOSFET] Allowable Power Dissipation, PD -- W 1.0 0.9 0.8 M ou nte do na ce 0.6 ram ic bo ard 0.4 (9 00 mm 2 !0 0.2 .8m m) 1u nit 160 IT11564 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C No.8688-4/6 CPH5846 10 7 5 3 2 IF -- VF [SBD] 100000 IR -- VR Ta=125C 100C 75C [SBD] 10000 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0 0.1 0.2 Reverse Current, IR -- A Forward Current, IF -- A 1000 50C 100 25C Ta =1 2 10 5 C 0 C 75 C 50 C 25 C 10 --2 5C 1.0 --25C 0.1 0.01 0.3 0.4 0.5 IT07150 0 5 10 15 IT07151 0.001 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W 0.7 PF(AV) -- IO Reverse Voltage, VR -- V 2 [SBD] (2) (4)(3) C -- VR [SBD] f=1MHz (1) Interterminal Capacitance, C -- pF 0.6 (1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180 100 7 5 0.5 0.4 0.3 Rectangular wave 360 3 2 0.2 Sine wave 0.1 0 0 180 360 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Average Output Current, IO -- A 3.5 IT07152 Reverse Voltage, VR -- V IT07153 IFSM -- t IS [SBD] Surge Forward Current, IFSM(Peak) -- A Current waveform 50Hz sine wave 3.0 2.5 20ms t 2.0 1.5 1.0 0.5 0 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Time, t -- s ID00338 No.8688-5/6 CPH5846 Note on usage : Since the CPH5846 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice. PS No.8688-6/6 |
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